IRL610A

MOSFET 200V N-Channel a-FET Logic Level

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SeekIC No. : 00161656 Detail

IRL610A: MOSFET 200V N-Channel a-FET Logic Level

floor Price/Ceiling Price

Part Number:
IRL610A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 1.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 1.5 Ohms
Continuous Drain Current : 3.3 A


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10A (Max.) @ VDS = 200V
 Lower RDS(ON):1.185W (Typ.)



Specifications

Symbol
Characteristic
Value
Units
VDSS
Drain-to-Source Voltage
200
V
ID
Continuous Drain Current (TC=25°C)
3.3
A
Continuous Drain Current (TC=100°C)
2.1
IDM
Drain Current-Pulsed (1)
12
A
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulsed Avalanche Energy (2)
29
mJ
IAR
Avalanche Current (1)
3.3
A
EAR
Repetitive Avalanche Energy (1)
3.3
mJ
dv/dt
Peak Diode Recovery dv/dt (2)
5.0
V/ns
PD
Total Power Dissipation (TC=25°C)
Linear Derating Factor
33
0.26
W
W/°C
TJ , TSTG
Operating Junction and
Storage Temperature Range
- 55 to +175
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300



Parameters:

Technical/Catalog InformationIRL610A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C3.3A
Rds On (Max) @ Id, Vgs1.5 Ohm @ 1.65A, 5V
Input Capacitance (Ciss) @ Vds 240pF @ 25V
Power - Max33W
PackagingTube
Gate Charge (Qg) @ Vgs9nC @ 5V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL610A
IRL610A



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