MFG:IR Package Cooled:02+ D/C:220
MFG: IR
Package Cooled: 02+
D/C: 220
Description: Third Generation HEXFETs from International Rectifier provide the designer with the best combination o...
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 5.2 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 3.3 | |
| IDM | Pulsed Drain Current | 21 | |
| PD @TC = 25°C | C Power Dissipation | 50 | W |
| Linear Derating Factor | 0.40 | W/°C | |
| VGS | Gate-to-Source Voltage | ±10 | V |
| EAS | Single Pulse Avalanche Energy | 125 | mJ |
| IAR | Avalanche Current | 5.2 | A |
| EAR | Repetitive Avalanche Energy | 5.0 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and TSTG Storage Temperature Range |
-55 to + 150 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
IRL620
PDF/DataSheet Download
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