MOSFET MOSFT 30V 150A 32nV 3.8mOhm Qg log lvl
IRL7833PBF: MOSFET MOSFT 30V 150A 32nV 3.8mOhm Qg log lvl
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 150 A | ||
| Resistance Drain-Source RDS (on) : | 4.5 mOhms | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
| Symbol | Parameter | Max. | Units |
| Linear Derating Factor | 0.96 | W/ | |
| VDS VGS |
Drain-Source Voltage Gate-to-Source Voltage |
30 ±20 |
V V |
| ID @ TC = 25 ID @ TC = 100 IDM |
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current |
150 110 600 |
A |
| PD @ TC = 25 PD @ TC = 100 |
Maximum Power Dissipation Maximum Power Dissipation |
140 72 |
W |
| TJ, TSTG |
Operating Junction Storage Temperature Range |
-55 ~ +150 | |
| Mounting Torque, 6-32 or M3 screw | 10 lbf`in (1.1N`m) |
| Technical/Catalog Information | IRL7833PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 150A |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 38A, 10V |
| Input Capacitance (Ciss) @ Vds | 4170pF @ 15V |
| Power - Max | 140W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 47nC @ 4.5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL7833PBF IRL7833PBF |