IRLBA1304

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Drain to Source Voltage (Vdss): 40V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 300W
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 140nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V
Package / Case: Super-220?-3 (Straight Leads)
Supplier Device Package: SUPER-220? (TO-273AA)
Current - Continuous Drain (Id) @ 25° C: 185A
Input Capacitance (Ciss) @ Vds: 7660pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	185, pkg limited to 95A*	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	130, pkg limited to 95A*	A
IDM	Pulsed Drain Current	740	A
PD @TC = 25°C	Power Dissipation	300	W
	Linear Derating Factor	2.0	W/°C
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	1160	mJ
IAR	Avalanche Current	100	A
EAR	Repetitive Avalanche Energy	30	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ,TSTG	Operating Junction Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Recommended clip force	20	N

Description

The IRLBA1304 HEXFET® is the most popular power MOSFET in the world.
This particular HEXFET® IRLBA1304 is in the Super220TM and has the same outline and pinout as the industry standard TO-220. It has increased current handling capability over both the TO-220 and the much larger TO-247 package. This makes IRLBA1304 ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. This package has also been designed to meet automotive qualification standard Q101.

Parameters:

Technical/Catalog Information	IRLBA1304
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	185A
Rds On (Max) @ Id, Vgs	4 mOhm @ 110A, 10V
Input Capacitance (Ciss) @ Vds	7660pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 4.5V
Package / Case	Super-220?-3 (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLBA1304 IRLBA1304