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IRLBD59N04E

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 41 IDM Pulsed Drain Current 230 PD @TC = 25°C C Power Dissipation 130 W Linear Derating Factor 0.89 W/°C VGS ...

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SeekIC No. : 004378369 Detail

IRLBD59N04E: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 41 IDM Pulsed Drain Current ...

IRLBD59N04E Data Sheet

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Part Number:
IRLBD59N04E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 41
IDM Pulsed Drain Current 230
PD @TC = 25°C C Power Dissipation 130 W
Linear Derating Factor 0.89 W/°C
VGS Gate-to-Source Voltage ±10 V
EAS Single Pulse Avalanche Energy 320 mJ
IAR Avalanche Current 35 A
EAR Repetitive Avalanche Energy 13 mJ
dv/dt Peak Diode Recovery dv/dt 2.2 V/ns
IG VGS Clamp Current ± 50
VESD Electrostatic Votage Rating ± 2.0
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)



Description

The IRLBD59N04E is a 40V, N-channel HEXFET® power MOSFET with gate protection provided by integrated back to back zener diodes. Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon diodes.

The IRLBD59N04E provides cost effective temperature sensing for system protection along with the quality and ruggedness you expect from a HEXFET power MOSFET.




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