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MFG:IR  Package Cooled:TO220  D/C:07+  

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Part Number: IRLI520N

 

MFG: IR

Package Cooled: TO220

D/C: 07+

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRLI520N General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

IRLI520N Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.1 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.7
IDM Pulsed Drain Current 35
PD @TC = 25°C Power Dissipation 30 W
Linear Derating Factor 0.20 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 85 mJ
IAR Avalanche Current 6.0 A
EAR Repetitive Avalanche Energy 3.0 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and 
Storage Temperature Range
-55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 screw   10 lbf•in (1.1N•m)  

IRLI520N datasheet

IRLI520N
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