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IRLIB4343PbF

MOSFET N-CH 55V 19A TO220FP

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SeekIC No. : 004378398 Detail

IRLIB4343PbF: MOSFET N-CH 55V 19A TO220FP

IRLIB4343PbF Data Sheet

floor Price/Ceiling Price

US $ .29~.29 / Piece | Get Latest Price
Part Number:
IRLIB4343PbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~3000
  • Unit Price
  • $.29
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175 Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
 Lead-Free


Specifications

Symbol Parameter
Max.
Units
VDS Drain-Source Voltage
55
V
VGS Gate-to-Source Voltage
±20
ID @ TC = 25 Continuous Drain Current, VGS @ 10V
19
A
ID @ TC= 100 Continuous Drain Current, VGS @ 10V
13
IDM Pulsed Drain Current1
80
PD @TC = 25 Power Dissipation
39
W
PD @TC = 100 Power Dissipation
20
  Linear Derating Factor
0.26
W/
TJ Operating Junction and
-40 to + 175
TSTG Storage Temperature Range
  Mounting torque, 6-32 or M3 screw 10lb`in (1.1N`m)  



Description

This Digital Audio HEXFET® IRLIB4343PbF  is specifically designed for Class-D audio amplifier applications. This MosFET IRLIB4343PbF  utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175 operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.




Parameters:

Technical/Catalog InformationIRLIB4343PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds 740pF @ 50V
Power - Max39W
PackagingTube
Gate Charge (Qg) @ Vgs42nC @ 10V
Package / CaseTO-220-3 Fullpak (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLIB4343PBF
IRLIB4343PBF



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