MFG:IR Package Cooled:2007+
MFG: IR
Package Cooled: 2007+
Description: This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This...
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175 operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
| Symbol | Parameter |
Max. |
Units |
| VDS | Drain-Source Voltage |
-55 |
V
|
| VGS | Gate-to-Source Voltage |
±20 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
-14 |
A |
| ID @TC= 100 | Continuous Drain Current, VGS @ 10V |
-10 | |
| IDM | Pulsed Drain Current1 |
-60 | |
| PD @TC = 25 | Power Dissipation |
33 |
W |
| PD@TC = 100 | Power Dissipation |
20 | |
| Linear Derating Factor |
0.26 |
W/ | |
| TJ | Operating Junction and |
-40 to + 175 |
|
| TSTG | Storage Temperature Range | ||
| Mounting torque, 6-32 or M3 screw |
10 (1.1) |
10lb`in (1.1N`m) |
IRL1004
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