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Part Number: IRLIZ44N

 

 

 

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRLIZ44N General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

IRLIZ44N Maximum Ratings

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
30
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
22
IDM Pulsed Drain Current
160
PD @TC = 25°C Power Dissipation
45
W
  Linear Derating Factor
0.3
W/
VGS Gate-to-Source Voltage
± 16
V
EAS Single Pulse Avalanche Energy
210
mJ
IAR Avalanche Current
25
A
EAR Repetitive Avalanche Energy
4.5
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)

IRLIZ44N Features

` Logic-Level Gate Drive
` Advanced Process Technology
` Isolated Package
` High Voltage Isolation = 2.5KVRMS
` Sink to Lead Creepage Dist. = 4.8mm
` Fully Avalanche Rated

IRLIZ44N datasheet

IRLIZ44N
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