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Part Number: IRLL2703PBF

 

MFG: IR

 

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRLL2703PBF General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

IRLL2703PBF Maximum Ratings

  Parameter Max. Units
ID @ TA = 25

ID @ TA = 25

ID @ TA = 70

IDM
Continuous Drain Current, VGS @ 10V**

Continuous Drain Current, VGS @ 10V*

Continuous Drain Current, VGS @ 10V*

Pulsed Drain Current
5.5

3.9

3.1

16
A
PD @TA = 25

PD @TA = 25
Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*
2.1

1.0
W
W
  Linear Derating Factor (PCB Mount)* 8.3 mW/
VGS

EAS

IAR
Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current
± 16

180

3.9
V

mJ

A
EAR

dv/dt

TJ, TSTG
Repetitive Avalanche Energy*

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range
0.1

5.0

-55 to + 150
mJ

V/ns

IRLL2703PBF Features

· Surface Mount
· Advanced Process Technology
·Ultra Low On-Resistance
· Dynamic dv/dt Rating
· Fast Switching
· Fully Avalanche Rated
·Lead-Free

IRLL2703PBF datasheet

IRL1004
PDF/DataSheet Download

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