MFG:IR Package Cooled:SOT-223 D/C:05+
MFG: IR
Package Cooled: SOT-223
D/C: 05+
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
| Parameter | Max. | V | |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V** | 6.5 | A |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V* | 4.6 | |
| ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V* | 3.7 | |
| IDM | Pulsed Drain Current | 37 | |
| PD @TA = 25°C | Power Dissipation (PCB Mount)** | 2.1 | W |
| PD @TA = 25°C | Power Dissipation (PCB Mount)* | 1.0 | W/°C |
| Linear Derating Factor (PCB Mount)* | 8.3 | V | |
| VGS | Gate-to-Source Voltage | ± 16 | V |
| EAS | Single Pulse Avalanche Energy | 140 | mJ |
| IAR | Avalanche Current | 4.6 | A |
| EAR | Repetitive Avalanche Energy | 0.10 | mJ |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
| dv/dt | Peak Diode Recovery dv/dt | 1.3 | V/ns |
IRL1004
PDF/DataSheet Download
Fifth Generation HEXFETs from International Rectifier IRLL3303 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLL3303 design that HEX...
MOSFET N-CH 55V 3.8A SOT223
MOSFET N-CH 55V 3.8A SOT223
The IRLL2705PbF has the following features including surface mount;dynamic dv/dt rating;login-level gate drive;fast switching;ease of paralleling;lead-free. The horizontal final stage transfer clock input pin LH1 is connected to the horizontal transfer cloc...
Fifth Generation HEXFETs from International Rectifier IRLL2705 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power...
MOSFET N-CH 30V 3.9A SOT223
Price: 1-1.8 USD
miniature power relay, 192 mW, 10 ms, High switching capacity, High contact welding resistance, Hi...
Price: 4-6 USD
8-bit microcontroller, In-System Programmable Flash, 2.7 - 5.5V, High-performance, Low-power, DIP
Price: 0.12-0.16 USD
anti-broken tone, low-EMI, filter 3 W Mono Class-D audio power amplifier, DFN2, NS4145, NSIWAY
Price: 0.8-1.4 USD
Micro-controller, DIP-40, 8-Bits
Price: 1-3 USD
128Kx8 bit, Low Power CMOS Static RAM, Low Data Retention Voltage, 2mV, 32-TSOP
Price: 1.58-1.6 USD
integrated class AB stereo headphone driver, SOP8, 0 to 8.0 V, No switch ON/OFF clicks, Short-cir...
Price: 2.5-3.5 USD
common mode choke, SMD/SMT, 100 kHz to 1 GHz
Price: 3.6-5 USD
IC FLATLINK(TM) RCVR 56-TSSOP - SN75LVDS82DGG
Price: 0.35-0.8 USD
Programmable-Delay Supervisory Circuit, SOT-23, 0.4V to 5.0V
Price: 60-100 USD
connector, 851-02R24-61P50, Connectors, Interconnects, SOURIAU
Price: 47-48 USD
module, 1200V, 15A, FP15R12YT3, eupec GmbH
Price: 6.1-6.35 USD
wide dynamic range, Analog-to-Digital converter, 8-SOIC, 500mW, ±10mA, –0.3V to 6V, low noise
