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IRLMS1503

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 3.2 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 2.6 A IDM Pulsed Drain Current 18 A PD @TA = 25°C Power Dissipation 1.7 A Linear Derating Factor 13 W/°C VGS ...

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IRLMS1503: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 3.2 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 2.6 A IDM Pulsed Drain Curre...

IRLMS1503 Data Sheet

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Part Number:
IRLMS1503
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Description



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 3.2 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 2.6 A
IDM Pulsed Drain Current 18 A
PD @TA = 25°C Power Dissipation 1.7 A
  Linear Derating Factor 13 W/°C
VGS Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -50 to + 150 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case) °C



Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier IRLMS1503 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLMS1503 design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET IRLMS1503 with RDS(on) 60% less than a similar size SOT-23. This package of IRLMS1503 is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.




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