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MFG:IR  D/C:2006  

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Part Number: IRLMS2002PbF

 

MFG: IR

 

D/C: 2006

Description: These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve...


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IRLMS2002PbF General Description


These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

IRLMS2002PbF Maximum Ratings

  Parameter
Max.
Units
VDS Drain- Source Voltage
20
V
ID @ TA = 25 Continuous Drain Current, VGS @ -4.5V
6.5
A
ID @ TA= 70 Continuous Drain Current, VGS @ -4.5V
5.2
IDM Pulsed Drain Current
20
PD @TA = 25 Power Dissipation
2.0
W
PD @TA = 70 Power Dissipation
1.3
  Linear Derating Factor
0.016
mW/
VGS Gate-to-Source Voltage
±8
V
TJ, TSTG Junction and Storage Temperature Range
-55 to +150

IRLMS2002PbF Features

Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
2.5V Rated
Lead-Free

IRLMS2002PbF datasheet

IRL1004
PDF/DataSheet Download

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