MFG:N/A Package Cooled:NA/ D/C:09+
MFG: N/A
Package Cooled: NA/
D/C: 09+
Description: These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve...
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The Micro6 package with its customized leadframeproduces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
| Parameter | Max. | Units | |
| VDS | Drain- Source Voltage | -20 | V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V 4.5V | -5.6 | A |
| ID @ TA = 100°C | Continuous Drain Current, VGS @ 10V 4.5V | -4.5 | |
| IDM | Pulsed Drain Current | -45 | |
| PD @TA = 25°C | Power Dissipation | 2.0 | W |
| PD @TA = 25°C | Power Dissipation | 1.3 | |
| Linear Derating Factor | 0.016 | W/°C | |
| EAS | Single Pulse Avalanche Energy | 31 | mJ |
| VGS | Gate-to-Source Voltage | ±12 | V |
| TJ TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
IRLMS6802
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