Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 95 A ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 64 A IDM Pulsed Drain Current 360 A PD @TC = 25°C Power Dissipation 150 W Li...
IRLP2505: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 95 A ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 64 A IDM Pu...
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Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 95 | A |
ID @ TC = 70°C | Continuous Drain Current, VGS @ 10V | 64 | A |
IDM | Pulsed Drain Current | 360 | A |
PD @TC = 25°C | Power Dissipation | 150 | W |
Linear Derating Factor | 1.0 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | 54 | A |
EAR | Repetitive Avalanche Energy | 15 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 2.9 |
V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
Fifth Generation HEXFETs from International Rectifier IRLP2505 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLP2505 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-247 package of IRLP2505 is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.