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IRLP3803

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 120 A ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 83 A IDM Pulsed Drain Current 470 A PD @TC = 25°C Power Dissipation 150 W L...

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IRLP3803: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 120 A ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 83 A IDM P...

IRLP3803 Data Sheet

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Part Number:
IRLP3803
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 120 A
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 83 A
IDM Pulsed Drain Current 470 A
PD @TC = 25°C Power Dissipation 150 W
  Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 610 mJ
IAR Avalanche Current 71 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt

1.8

 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)  
  Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)  



Description

Fifth Generation HEXFETs from International Rectifier IRLP3803 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLP3803 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-247 package of IRLP3803 is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to theearlier TO-218 package because of its isolated mounting hole.




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