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Part Number: IRLR024ZPbF

 

 

 

 

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...


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IRLR024ZPbF General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications

IRLR024ZPbF Maximum Ratings

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 16 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 11
IDM Pulsed Drain Current 􀀀 64
PD @TC = 25 Power Dissipation 35 W
  Linear Derating Factor 0.23 W/
VGS Gate-to-Source Voltage ± 16 V
EAS (Thermally limited) Single Pulse Avalanche Energy 25 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value 25
IAR Avalanche Current 􀀀 See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ,TSTG Operating Junction and
Storage Temperature Range
-55 to + 175  
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRLR024ZPbF Features

` Logic Level
` Advanced Process Technology
` Ultra Low On-Resistance
`175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free

IRLR024ZPbF datasheet

IRL1004
PDF/DataSheet Download

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