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Part Number: IRLR024ZPbF
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...


Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 16 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 11 | |
| IDM | Pulsed Drain Current | 64 | |
| PD @TC = 25 | Power Dissipation | 35 | W |
| Linear Derating Factor | 0.23 | W/ | |
| VGS | Gate-to-Source Voltage | ± 16 | V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy | 25 | mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 25 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ,TSTG | Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
IRL1004
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