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SeekIC No. : 00162689 Detail

IRLR110ATM: MOSFET N-CH/LL/100V/4.7A/0.4OHM@VGS=5V/Substitute of IRLR110TM

IRLR110ATM Data Sheet

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Part Number:: IRLR110ATM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2025/12/7

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US $1.03 - 1.7 / Piece

MOSFET N-Chan 60V 2.7 Amp

Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	4.7 A
Resistance Drain-Source RDS (on) :	0.44 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 4.7 A
Resistance Drain-Source RDS (on) : 0.44 Ohms

Parameters:

Technical/Catalog Information	IRLR110ATM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	4.7A
Rds On (Max) @ Id, Vgs	440 mOhm @ 2.35A, 5V
Input Capacitance (Ciss) @ Vds	235pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	8nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR110ATM IRLR110ATM

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IRLR110ATM

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