IRLR7833

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 50nC @ 4.5V
Packaging: Tube
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
Manufacturer: International Rectifier
Power - Max: 140W
Current - Continuous Drain (Id) @ 25° C: 140A
Input Capacitance (Ciss) @ Vds: 4010pF @ 15V


Features:

· Very Low R_DS(on) at 4.5V V_GS
· Ultra-Low Gate Impedance
· Fully Characterized Avalanche Voltage and Current


Application

· High Frequency Synchronous Buck Converters for Computer Processor Power
· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

Specifications

	Parameter		Units
ID @ VGS = 12V, TC = 25°C	Continuous Drain Current	89	A
ID @ VGS = 12V, TC = 100°C	Continuous Drain Current	63	A
IDM	Pulsed Drain Current	42	A
PD @ TC = 25°C	Max. Power Dissipation	360	W
	Linear Derating Factor	130	W/°C
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	110	mJ
IAR	Avalanche Current	190	A
EAR	Repetitive Avalanche Energy	0.5	mJ
dv/dt	Peak Diode Recovery dv/dt	3.5	V/ns
TJ	Operating Junction	-55 to 175	oC
TSTG	Storage Temperature Range	See Fig.12a, 12b, 15, 16	oC
	Pckg. Mounting Surface Temp.	300(1.6mm from case )	oC
	Weight	0.98 (Typical)	g