MOSFET N-CH 25V 100A DPAK
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Characteristic | Parameter | Max. | Unit |
ID @ TC = 25 ID @ TC = 100 IDM |
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current |
100 72 410 |
A |
PD @TC = 25 PD @ TC = 100 |
Maximum Power Dissipation Maximum Power Dissipation |
81 40 |
W |
Linear Derating Factor | 0.54 | W/ | |
VDS VGS |
Drain-to-Source Voltage Gate-to-Source Voltage |
± 20 25 |
V |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Technical/Catalog Information | IRLR8713PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 21A, 10V |
Input Capacitance (Ciss) @ Vds | 2240pF @ 13V |
Power - Max | 81W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 26nC @ 4.5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLR8713PBF IRLR8713PBF |