IRLR9343PBF

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : - 20 A
Resistance Drain-Source RDS (on) : 170 mOhms
Drain-Source Breakdown Voltage : - 55 V


Features:

· Advanced Process Technology
·Key Parameters Optimized for Class-D Audio Amplifier Applications
· Low RDSON for Improved Efficiency
· Low Qg and Qsw for Better THD and Improved Efficiency
· Low Qrr for Better THD and Lower EMI
· 175°C Operating Junction Temperature for Ruggedness
· Repetitive Avalanche Capability for Robustness and Reliability
· Multiple Package Options
· Lead-Free


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	-55	V
VGS	Gate-to-Source Voltage	± 20
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	-20	A
ID @ TC =100°C	Continuous Drain Current, VGS @ 10V	-14	A
IDM	Pulsed Drain Current	-60	A
PD @ TC = 25	Maximum Power Dissipation	79	W
PD @ TC =100°C	Maximum Power Dissipation	39	W
	Linear Derating Factor	0.53	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Clamping Pressure	-	N

Description

This Digital Audio HEXFET® IRLR9343PbF is specifically designed for Class-D audio amplifier applications. This MosFET IRLR9343PbF utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.

Parameters:

Technical/Catalog Information	IRLR9343PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	105 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds	660pF @ 50V
Power - Max	79W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	47nC @ 10V
Package / Case	DPak,SC-63,TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR9343PBF IRLR9343PBF