MFG:IR/FAIRCHILD Package Cooled:TO-251 D/C:05+
MFG: IR/FAIRCHILD
Package Cooled: TO-251
D/C: 05+
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
28 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
20 | |
| IDM |
Pulsed Drain Current |
110 | |
| PD @TC = 25°C |
Power Dissipation |
68 |
W |
|
Linear Derating Factor |
0.45 |
W/°C | |
| VGS |
Gate-to-Source Voltage |
± 16 |
V |
| EAS |
Single Pulse Avalanche Energy |
110 |
mJ |
| IAR |
Avalanche Current |
16 |
A |
| EAR |
Repetitive Avalanche Energy |
6.8 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
· Logic-Level Gate Drive
· Ultra Low On-Resistance
· Surface Mount (IRLR2705)
· Straight Lead (IRLU2705)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated
IRLU2705
PDF/DataSheet Download
MOSFET N-CH 30V 23A I-PAK
Fifth Generation HEXFETs from International Rectifier IRLU2703 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized IRLU2703 device design th...
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