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Part Number: IRLU2905ZPbF

 

 

 

 

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...


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IRLU2905ZPbF General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

 

IRLU2905ZPbF Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25
Continuous Drain Current VGS @ 10V(Silicon Limited)
60
A
ID @ TC =100
Continuous Drain Current VGS @ 10V
43
ID @ TC = 25
 Continuous Drain Current, VGS @ 10V (Package Limited)

42

IDM
Pulsed Drain Current
240
PD @ TC = 25
Max. Power Dissipation

110
W
Linear Derating actor
0.72
W/
VGS
Gate-to-Source Voltage
±16
V

EAS (Thermally limited)

 Single Pulse Avalanche Energy
57
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
85
mJ
IAR
Avalanche Current
 See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
TJ
Operating Junction
-55 to 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10lb`in (1.1N`m)

IRLU2905ZPbF Features

` Logic Level
` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free

IRLU2905ZPbF datasheet

IRL1004
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