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MFG:IR  Package Cooled:TO-251  D/C:02+  

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IRL Series Datasheet download

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Part Number: IRLU3103

 

MFG: IR

Package Cooled: TO-251

D/C: 02+

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRLU3103 General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRLU3103 Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 46 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 A
IDM Pulsed Drain Current 220 A
PD @TC = 25°C Power Dissipation 69 W
  Linear Derating Factor 0.56 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 240 mJ
IAR Avalanche Current 34 A
EAR Repetitive Avalanche Energy 6.9 mJ
dv/dt Peak Diode Recovery dv/dt 2.0 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case) °C

IRLU3103 Features

· Logic-Level Gate Drive
· Ultra Low On-Resistance
· Surface Mount (IRLR3103)
· Straight Lead (IRLU3103)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated

IRLU3103 datasheet

IRLU3103
PDF/DataSheet Download

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