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Part Number: IRLU3105PbF

 

 

 

 

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...


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IRLU3105PbF General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this  design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRLU3105PbF Maximum Ratings

  Parameter Max. Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 25 A
ID @ VGS = 12V, TC =100 Continuous Drain Current 18
IDM Pulsed Drain Current 100
PD @ TC = 25 Max. Power Dissipation 57 W
  Linear Derating Factor 0.38 W/
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 61 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 94
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 3.4 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6 mm from case )

IRLU3105PbF Features

` Logic-Level Gate Drive
` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free

IRLU3105PbF datasheet

IRL1004
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