IRLU3105PbF

MOSFET N-CH 55V 25A I-PAK

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SeekIC No. : 004378509 Detail

IRLU3105PbF: MOSFET N-CH 55V 25A I-PAK

floor Price/Ceiling Price

US $ .2~.43 / Piece | Get Latest Price
Part Number:
IRLU3105PbF
Mfg:
International Rectifier
Supply Ability:
5000

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  • Processing time
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Upload time: 2024/4/26

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Product Details

Description



Features:

` Logic-Level Gate Drive
` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free



Specifications

  Parameter Max. Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 25 A
ID @ VGS = 12V, TC =100 Continuous Drain Current 18
IDM Pulsed Drain Current 100
PD @ TC = 25 Max. Power Dissipation 57 W
  Linear Derating Factor 0.38 W/
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 61 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 94
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 3.4 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6 mm from case )



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLU3105PbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRLU3105PbF are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this  design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The D-Pak IRLU3105PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




Parameters:

Technical/Catalog InformationIRLU3105PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs37 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 710pF @ 25V
Power - Max57W
PackagingBulk
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLU3105PBF
IRLU3105PBF



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