IRLU3705Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 66nC @ 5V
Power - Max: 130W
Input Capacitance (Ciss) @ Vds: 2900pF @ 25V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 42A
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V


Features:

· Logic Level
· Advanced Process Technology
· Ultra Low On-Resistance
· 175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax




Specifications

	Parameter		Units
ID @ VGS = 12V, TC = 25°C	Continuous Drain Current	89	A
ID @ VGS = 12V, TC = 100°C	Continuous Drain Current	63	A
IDM	Pulsed Drain Current	42	A
PD @ TC = 25°C	Max. Power Dissipation	360	W
	Linear Derating Factor	130	W/°C
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	110	mJ
IAR	Avalanche Current	190	A
EAR	Repetitive Avalanche Energy	0.5	mJ
dv/dt	Peak Diode Recovery dv/dt	3.5	V/ns
TJ	Operating Junction	-55 to 175	oC
TSTG	Storage Temperature Range	See Fig.12a, 12b, 15, 16	oC
	Pckg. Mounting Surface Temp.	300(1.6mm from case )	oC
	Weight	0.98 (Typical)	g

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET IRLU3705Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRLU3705Z are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.