MFG:IR Package Cooled:07+ D/C:I-pak
MFG: IR
Package Cooled: 07+
D/C: I-pak
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Units | ||
| ID @ VGS = 12V, TC = 25°C | Continuous Drain Current | 89 | A |
| ID @ VGS = 12V, TC = 100°C | Continuous Drain Current | 63 | A |
| IDM | Pulsed Drain Current | 42 | A |
| PD @ TC = 25°C | Max. Power Dissipation | 360 | W |
| Linear Derating Factor | 130 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 110 | mJ |
| IAR | Avalanche Current | 190 | A |
| EAR | Repetitive Avalanche Energy | 0.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.5 | V/ns |
| TJ | Operating Junction | -55 to 175 | oC |
| TSTG | Storage Temperature Range | See Fig.12a, 12b, 15, 16 | oC |
| Pckg. Mounting Surface Temp. | 300(1.6mm from case ) | oC | |
| Weight | 0.98 (Typical) | g |
IRLU3705Z
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