IRLU3715

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 54A
Gate Charge (Qg) @ Vgs: 17nC @ 4.5V
Power - Max: 3.8W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Input Capacitance (Ciss) @ Vds: 1060pF @ 10V
Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V


Features:

· Ultra-Low Gate Impedance
· Very Low R_DS(on) at 4.5V V_GS
· Fully Characterized Avalanche Voltage and Current


Application

· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
· High Frequency Buck Converters for Computer Processor Power

Specifications

V_DS Drain-Source Voltage .............................................................20 V
V_GS Gate-to-Source Voltage ......................................................± 20 V
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V .................54 A
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V ...............38 A
I_DM Pulsed Drain Current ............................................................210 A
P_D @T_C = 25°C Maximum Power Dissipation ................................71 W
P_D @T_A = 25°C Maximum Power Dissipation ...............................3.8 W
Linear Derating Factor ..........................................................0.48 W/°C
T_J , T_STG Junction and Storage Temperature Range .....-55 to + 175 °C