IRLU3915PBF

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Drain-Source Breakdown Voltage : 55 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 17 mOhms
Continuous Drain Current : 61 A


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
`175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	61	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	43
ID @ TC = 25		30
IDM	Pulsed Drain Current	240
PD @ TC = 25	Max. Power Dissipation	120	W
	Linear Derating Factor	0.77	W/
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	200	mJ
EAS (6 sigma)	Single Pulse Avalanche Energy Tested Value	600
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6 mm from case)

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
 Limited by TJmax, starting T_J = 25, L = 0.45mH, R_G = 25, I_AS = 30A, V_GS =10V.
    Part not recommended for use above this value.
Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.


Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLU3915PbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRLU3915PbF are a 175 junction operating temperature, fast switching speed and improved  repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRLU3915PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	14 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1870pF @ 25V
Power - Max	120W
Packaging	Tube
Gate Charge (Qg) @ Vgs	92nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLU3915PBF IRLU3915PBF