IRLZ44ZLPBF

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-262
Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 22.5 mOhms


Features:

Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
 Lead-Free


Specifications

	Parameter	Maximum	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	51	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	36
IDM	Pulsed Drain Current 􀀀	204
PD @TC= 25	Power Dissipation	80	W
	Linear Derating Factor	0.53	W/
VGS	Gate-to-Source Voltage	± 16	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	78	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	110
IAR	Avalanche Current􀀀	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLZ44ZLPbFutilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of IRLZ44ZLPbF are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.