MFG:IR Package Cooled:D2-Pak D/C:08
MFG: IR
Package Cooled: D2-Pak
D/C: 08
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter |
Maximum |
Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
51 |
A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V |
36 | |
| IDM | Pulsed Drain Current |
204 | |
| PD @TC= 25 | Power Dissipation |
80 |
W |
| Linear Derating Factor |
0.53 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 16 |
V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy |
78 |
mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
110 |
|
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
||
| Mounting Torque, 6-32 or M3 screw |
10 lbf`in (1.1N`m) |
IRL1004
PDF/DataSheet Download
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