IRS2111SPbF

Mounting Style : SMD/SMT
Product : Half-Bridge Drivers
Maximum Operating Temperature : + 125 C
Package / Case : SOIC-8
Packaging : Tube
Type : High Side/Low Side
Supply Voltage - Max : 20 V
Supply Voltage - Min : 10 V
Rise Time : 130 ns
Maximum Power Dissipation : 625 mW
Fall Time : 65 ns
Supply Current : 0.18 mA


Features:

• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
• Internally set deadtime
• High side output in phase with input


Specifications

Symbol	Definition		Min.	Max.	Units
VB VS VHO	High side floating supply voltage High side floating supply offset voltage High side floating output voltage		-0.3 VB - 25 VS - 0.3	625 (Note 1) VB + 0.3 VB + 0.3	V
VCC VLO VIN	Low side and logic fixed supply voltage Low side output voltage Logic input voltage		-0.3 -0.3 -0.3	25 (Note 1) VCC + 0.3 VCC + 0.3
dVs/dt	Allowable offset supply voltage transient (Fig. 2)		-	50	V/ns
PD	Package power dissipation @ TA +25	8 Lead PDIP) 8 lead SOIC)	- -	1.0 0.625	W
RthJA	Thermal resistance, junction to ambient	8 Lead PDIP) 8 lead SOIC)	- -	125 200	/W
TJ TS TL	Junction temperature Storage temperature Lead temperature (soldering, 10 seconds)		- -55 -	150 150 300

Note 1: All supplies are fully tested at 25 V, and an internal 20 V clamp exists for each supply


Description

The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side configuration which operates up to 600 V.

Parameters:

Technical/Catalog Information	IRS2111SPBF
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	Half Bridge
Voltage - Supply	10 V ~ 20 V
Current - Peak	290mA
Delay Time	750ns
Package / Case	8-SOIC (3.9mm Width)
Packaging	Tube
Number of Outputs	2
Input Type	Inverting and Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRS2111SPBF IRS2111SPBF