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Part Number: IRS2530D(S)

 

 

 

 

Description: This IC takes full advantage of IR's patented ballast and high-voltage technologies to realize a simpl...


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IRS2530D(S) General Description


This IC takes full advantage of IR's patented ballast and high-voltage technologies to realize a simple,  ighperformance dimming ballast solution. A single high-voltage pin senses the half-bridge current and voltage to perform necessary ballast protection functions. The DC dim input voltage reference and the AC lamp current feedback have been coupled together allowing a single pin to be used for dimming. Combining these high-voltage control algorithms together with a simple dimming method in a single 8-pin IC results in a large reduction in component count, an increase in manufacturability and reliability, a reduced design cycle time, while maintaining high dimming ballast system performance

IRS2530D(S) Maximum Ratings

Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.

Symbol
Definition
Min.
Max.
Units
VB
High-Side Floating Supply Voltage
-0.3
625
V
VS
High-Side Floating Supply Offset Voltage
VB - 25
VB + 0.3
VHO
High-Side Floating Output Voltage
VS - 0.3
VB + 0.3
VLO
Low-Side Output Voltage
-0.3
VCC + 0.3
VVCO
VCO Input Voltage††
-0.3
6
VDIM
DIM Input Voltage
-0.3
VCC + 0.3
ICC
Supply Current†
20
mA
IOMAX
Maximum allowable current at LO, HO and PFC due to
external power transistor Miller effect.
-500
500
dVS/dt
Allowable VS Pin Voltage Slew Rate
-50
50
V/ns
PD
Maximum Power Dissipation @ TA +25, 8-Pin DIP
1.0
W
PD
Maximum Power Dissipation @ TA +25, 8-Pin SOIC
0.625
RJA
Thermal Resistance, Junction to Ambient, 8-Pin DIP
85
/W
RJA
Thermal Resistance, Junction to Ambient, 8-Pin SOIC
128
TJ
Junction Temperature
-55
150
TS
Storage Temperature
-55
150
TL
Lead Temperature (Soldering, 10 seconds)
300

† This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. This supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section.

†† This IC contains a zener clamp structure between the chip VCO  and COM which has a nominal breakdown voltage of 7.25V. This pin should not be driven by a DC, low impedance  ower source greater than the VVCOMAX specified in the Electrical Characteristics section.

IRS2530D(S) Features

• Dimming ballast control plus half-bridge driver
• Closed-loop lamp current dimming control
• Internal non-ZVS protection
• Internal crest factor protection
• Programmable preheat time
• Fixed dead-time (2.0s typ.)
• Lamp insert auto-restart
• Internal bootstrap MOSFET
• Internal 15.6V zener clamp diode on Vcc
• Micropower startup (250A)
• Latch immunity and ESD protection

IRS2530D(S) Typical Application

• Linear dimming ballast (down to 10%)
• 3-way dimming ballast
• Multi-level switch dimming ballast

IRS2530D(S) datasheet

IRS20124S
PDF/DataSheet Download

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