Purchase IS41C16100, In-stock IS41C16100 From SeekIC.
MFG:SOJ44
Part Number: IS41C16100
MFG: SOJ44
Description: The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dy...
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IS41C16100
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DataSheet
General Description
IS41C16100 General Description
The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems.
These features make the IS41C16100and IS41LV16100 ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications.
The IS41C16100 and IS41LV16100 are packaged in a 42-pin 400- mil SOJ and 400-mil 50- (44-) pin TSOP (Type II). The lead-free 400- mil 50- (44-) option is available too.
IS41C16100 Maximum Ratings
| Symbol | Parameters |
Rating |
Unit |
| VT | Voltage on Any Pin Relative to GND 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
| Vcc | Supply Voltage 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
| IOUT | Output Current |
50 |
mA |
| PD | Power Dissipation |
1 |
W |
| TA | Commercial Operation Temperature Industrial Operationg Temperature |
0 to +70 40 to +85 |
|
| TSTG | Storage Temperature |
55 to +125 |
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
IS41C16100 Features
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
- Auto refresh Mode: 1,024 cycles /16 ms
- RAS-Only, CAS-before-RAS (CBR), and Hidden
- Self refresh Mode - 1,024 cycles / 128ms
• JEDEC standard pinout
• Single power supply:
- 5V ± 10% (IS41C16100)
- 3.3V ± 10% (IS41LV16100)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40 to 85
• Refresh Interval:
- Auto refresh Mode: 1,024 cycles /16 ms
- RAS-Only, CAS-before-RAS (CBR), and Hidden
- Self refresh Mode - 1,024 cycles / 128ms
• JEDEC standard pinout
• Single power supply:
- 5V ± 10% (IS41C16100)
- 3.3V ± 10% (IS41LV16100)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40 to 85
IS41C16100 Connection Diagram
IS41C16100
PDF/DataSheet Download
- Datasheet: IS41C16100
- File Size: 126601 KB
- Manufacturer: ISSI [Integrated Silicon Solution, Inc]
- Click here to Download
- ·IS41C16100-50K
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50KI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50T
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50TI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60K
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60KI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60T
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60TI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
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