Purchase IS41C16100S, In-stock IS41C16100S From SeekIC.
Part Number: IS41C16100S
Description: The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Acce...
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IS41C16100S
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DataSheet
General Description
IS41C16100S General Description
The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100S ideal for use in 16-, 32-bit wide data bus systems.
These features make the IS41C16100Sand IS41LV16100S ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IS41C16100S and IS41LV16100S are packaged in a 42-pin 400mil SOJ and 400mil 50- (44-) pin TSOP-2.
IS41C16100S Maximum Ratings
| Symbol | Parameters |
Rating |
Unit |
| VT | Voltage on Any Pin Relative to GND 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
| Vcc | Supply Voltage 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
| IOUT | Output Current |
50 |
mA |
| PD | Power Dissipation |
1 |
W |
| TA | Commercial Operation Temperature Industrial Operationg Temperature |
0 to +70 40 to +85 |
|
| TSTG | Storage Temperature |
55 to +125 |
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
IS41C16100S Features
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
Refresh Mode: 1,024 cycles /16 ms
RAS-Only, CAS-before-RAS (CBR), and Hidden
Self refresh Mode - 1,024 cycles / 128ms
• JEDEC standard pinout
• Single power supply:
5V ± 10% (IS41C16100S)
3.3V ± 10% (IS41LV16100S)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40°C to 85°C
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
Refresh Mode: 1,024 cycles /16 ms
RAS-Only, CAS-before-RAS (CBR), and Hidden
Self refresh Mode - 1,024 cycles / 128ms
• JEDEC standard pinout
• Single power supply:
5V ± 10% (IS41C16100S)
3.3V ± 10% (IS41LV16100S)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40°C to 85°C
IS41C16100S Connection Diagram
IS41C16100S
PDF/DataSheet Download
- Datasheet: IS41C16100S
- File Size: 546521 KB
- Manufacturer: ICSI [Integrated Circuit Solution Inc]
- Click here to Download
- ·IS41C16100
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50K
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50KI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50T
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50TI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60K
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60KI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60T
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
IS41C16100S Relative Products
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