IS42S16400F-6BL

DRAM 64M (4Mx16) 166MHz SDRAM, 3.3v

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IS42S16400F-6BL Picture
SeekIC No. : 00452842 Detail

IS42S16400F-6BL: DRAM 64M (4Mx16) 166MHz SDRAM, 3.3v

floor Price/Ceiling Price

US $ 1.82~2.01 / Piece | Get Latest Price
Part Number:
IS42S16400F-6BL
Mfg:
ISSI
Supply Ability:
5000

Price Break

  • Qty
  • 0~348
  • 348~696
  • 696~1044
  • 1044~2088
  • Unit Price
  • $2.01
  • $1.93
  • $1.84
  • $1.82
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Data Bus Width : 16 bit Package / Case : TFBGA-54
Memory Size : 64 Mbit Maximum Clock Frequency : 166 MHz
Access Time : 6 ns, 5.4 ns Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 3 V Maximum Operating Current : 130 mA
Maximum Operating Temperature : + 70 C Packaging : Tray    

Description

Organization :
Data Bus Width : 16 bit
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 3 V
Maximum Clock Frequency : 166 MHz
Maximum Operating Temperature : + 70 C
Packaging : Tray
Memory Size : 64 Mbit
Access Time : 6 ns, 5.4 ns
Maximum Operating Current : 130 mA
Package / Case : TFBGA-54


Pinout

  Connection Diagram


Description

The IS42S16400F-6BL is designed as one kind of 1 Meg bits x 16 bits x 4 banks (64-Mbit) synchronous dynamic RAM device that is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. And the inputs and outputs signals refer to the rising edge of the clock input.

Features of the IS42S16400F-6BL are:(1)Clock frequency: 200, 166, 143, 133 MHz; (2)Fully synchronous; all signals referenced to a positive clock edge; (3)Internal bank for hiding row access/precharge; (4)Single 3.3V power supply; (5)LVTTL interface; (6)Programmable burst length: (1, 2, 4, 8, full page); (7)Programmable burst sequence: Sequential/Interleave; (8)Self refresh modes; (9)4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade); (10)Random column address every clock cycle; (11)Programmable CAS latency (2, 3 clocks); (12)Burst read/write and burst read/single write operations capability; (13)Burst termination by burst stop and precharge command.

The absolute maximum ratings of the IS42S16400F-6BL can be summarized as:The absolute maximum ratings of the can be summarized as:(1)Maximum Supply Voltage:1.0 to +4.6 V;(2)Maximum Supply Voltage for Output Buffer:1.0 to +4.6 V;(3)Input Voltage:1.0 to +VDDQ+0.5 V;(4)Output Voltage:1.0 to +VDDQ+0.5 V;(5)Allowable Power Dissipation: 1 W;(6)output Shorted Current: 50 mA;(7)Storage Temperature:65 to +150 °C. If you want to know more information such as the electrical characteristics about the IS42S16400F-6BL, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationIS42S16400F-6BL
VendorISSI, Integrated Silicon Solution Inc
CategoryIntegrated Circuits (ICs)
Memory TypeSDRAM
Memory Size64M (4M x 16)
Speed166MHz
InterfaceParallel
Package / Case54-BGA
PackagingTray
Voltage - Supply3 V ~ 3.6 V
Operating Temperature0°C ~ 70°C
Format - MemoryRAM
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IS42S16400F 6BL
IS42S16400F6BL



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