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Description: The ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836A and IS61(64)LPS/VPS25618A are high-speed, low-power ...


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IS61(64)VPS25618A General Description


The ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836A and IS61(64)LPS/VPS25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LPS12832A is organized as 131,072 words by 32 bits. The IS61(64)LPS/VPS12836A is organized as 131,072 words by 36 bits. The IS61(64)LPS/ VPS25618A is organized as 262,144 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be on to four bytes wide as controlled by the write control inputs.

Separate byte enables allow individual bytes to be written. The byte write operation is performed by using the byte write enable (BWE) input combined with one or more individual byte write signals (BWx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the byte write controls.

Bursts can be initiated with eitherADSP (Address Status Processor) or ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be generated internally and controlled by the ADV (burst address advance) input pin.

The mode pin is used to select the burst sequence order, Linear burst is achieved when this pin is tied LOW. Interleave burst is achieved when this pin is tied HIGH or left floating.

IS61(64)VPS25618A Maximum Ratings

Symbol
Parameter
Value
Unit
TSTG
Storage Temperature
55 to +150
°C
PD
Power Dissipation
1.6
W
IOUT
Output Current (per I/O)
100
mA
VIN, VOUT
Voltage Relative to Vss for I/O Pins
0.5 to VDDQ + 0.5
V
VIN

Voltage Relative to Vss for

for Address and Control Inputs

0.5 to VDD + 0.5
V
VDD
Voltage on VDD Supply Relative to Vss
0.5 to 4.6
V

IS61(64)VPS25618A Features

• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• Power Supply
LPS: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%
VPS: VDD 2.5V + 5%, VDDQ 2.5V + 5%
• JEDEC 100-Pin TQFP, 119-ball PBGA, and 165-ball PBGA packages
• Automotive temperature available
• Lead Free available

IS61(64)VPS25618A Connection Diagram

IS61(64)VPS25618A  Connection Diagram

IS61(64)VPS25618A datasheet

IS604
PDF/DataSheet Download

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