IS61C1024AL

Features: • High-speed access time: 12, 15 ns• Low active power: 160 mW (typical)• Low standby power: 1000 W (typical) CMOS standby• Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications• Fully static operation: no clock or refresh requi...

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IS61C1024AL Picture
SeekIC No. : 004379119 Detail

IS61C1024AL: Features: • High-speed access time: 12, 15 ns• Low active power: 160 mW (typical)• Low standby power: 1000 W (typical) CMOS standby• Output Enable (OE) and two Chip Enable (C...

floor Price/Ceiling Price

Part Number:
IS61C1024AL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

• High-speed access time: 12, 15 ns
• Low active power: 160 mW (typical)
• Low standby power: 1000 W (typical) CMOS standby
• Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
• Commercial, industrial, and automotive temperature ranges available
• Lead free available





Pinout

  Connection Diagram




Specifications

Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND 0.5 to +7.0 V
TSTG Storage Temperature 65 to +150
PT Power Dissipation 1.5 W
IOUT DC Output Current (LOW) 20 Unit

Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.






Description

The ISSI IS61C1024AL/IS64C1024AL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

WhenCE1 is HIGH orCE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip Enable inputs,CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.

The IS61C1024AL/IS64C1024AL is available in 32-pin 300- mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20), and 32-pin sTSOP (Type I, 8 x 13.4) packages.






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