MFG:ISSI Package Cooled:TSOP1(32)/TSOP1(32) D/C:08+
MFG: ISSI
Package Cooled: TSOP1(32)/TSOP1(32)
D/C: 08+
Description: The ISSI IS61C1024AL/IS64C1024AL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RA...
The ISSI IS61C1024AL/IS64C1024AL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS61C1024AL/IS64C1024AL is available in 32-pin 300- mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20), and 32-pin sTSOP (Type I, 8 x 13.4) packages.
| Symbol | Parameter | Value | Unit |
| VTERM | Terminal Voltage with Respect to GND | 0.5 to +7.0 | V |
| TSTG | Storage Temperature | 65 to +150 | |
| PT | Power Dissipation | 1.5 | W |
| IOUT | DC Output Current (LOW) | 20 | Unit |
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
IS61C1024AL
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The ISSI IS61C1024 and IS61C1024L are very high-speed,low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields...
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