SRAM 4M (128Kx36) 200MHz Sync SRAM 3.3v
IS61LPS12836A-200B2I: SRAM 4M (128Kx36) 200MHz Sync SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
| Memory Size : | 4.5 Mbit | Access Time : | 3.1 ns | ||
| Supply Voltage - Max : | 3.465 V | Supply Voltage - Min : | 3.135 V | ||
| Maximum Operating Current : | 210 mA | Maximum Operating Temperature : | + 85 C | ||
| Minimum Operating Temperature : | - 40 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | BGA | Packaging : | Tray |
| Technical/Catalog Information | IS61LPS12836A-200B2I |
| Vendor | ISSI, Integrated Silicon Solution Inc |
| Category | Integrated Circuits (ICs) |
| Memory Type | SRAM - Synchronous |
| Memory Size | 4M (128K x 36) |
| Speed | 200MHz |
| Interface | Parallel |
| Package / Case | 119-BGA |
| Packaging | Tray |
| Voltage - Supply | 3.135 V ~ 3.465 V |
| Operating Temperature | -40°C ~ 85°C |
| Format - Memory | RAM |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IS61LPS12836A 200B2I IS61LPS12836A200B2I |