PinoutDescriptionThe IS61LV12816-15T is designed as one kind of high-speed, 2,097,152-bit static RAM device that is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP, 44-pin LQFP, and 48-pin mini BGA (6mm x 8mm). And this device assumes a standby mode at which the power dissipation ca...
IS61LV12816-15T: PinoutDescriptionThe IS61LV12816-15T is designed as one kind of high-speed, 2,097,152-bit static RAM device that is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP, 44-pin LQFP, and 4...
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
The IS61LV12816-15T is designed as one kind of high-speed, 2,097,152-bit static RAM device that is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP, 44-pin LQFP, and 48-pin mini BGA (6mm x 8mm). And this device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Features of the IS61LV12816-15T are:(1)High-speed access time: 8, 10, 12, and 15 ns; (2)CMOS low power operation; (3)TTL and CMOS compatible interface levels; (4)Single 3.3V +/- 10% power supply; (5)Fully static operation: no clock or refresh required; (6)Three state outputs; (7)Data control for upper and lower bytes; (8)Industrial temperature available.
The absolute maximum ratings of the IS61LV12816-15T can be summarized as:(1)Terminal Voltage with Respect to GND: 0.5 to Vcc+0.5 V;(2)Storage Temperature: -65 to +150 °C;(3)Power Dissipation: 2.0 W;(4)Temperature Under Bias: -55 to +125 °C;(5)DC Output Current: ±20 mA;(6)Power Supply Voltage Relative to GND: -0.5 to 5.0 V. If you want to know more information such as the electrical characteristics about the IS61LV12816-15T, please download the datasheet in www.seekic.com or www.chinaicmart.com.