Features: • High-speed access times: 8, 10, 12 and 15 ns• High-performance, low-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy memory expansion withCE and OE options•CE power-down• Low power: 540 mW @ 10 ns 36 mW stand...
IS61LV2568: Features: • High-speed access times: 8, 10, 12 and 15 ns• High-performance, low-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy mem...
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Symbol | Parameter | Value | Unit |
VCC | Supply voltage with Respect to GND | 0.5 to +4.6 | V |
VTERM | Terminal Voltage with Respect to GND | 0.5 to Vcc + 0.5 | V |
TBIAS | Temperature Under Bias Com. Ind. |
10 to +85 45 to +90 |
°C |
TSTG | Storage Temperature | 65 to +150 | °C |
PD | Power Dissipation | 1.0 | W |
The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568
is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 36mW (max.) with CMOS input levels.
The IS61LV2568 operates from a single 3.3V power supply and all inputs are TTL-compatible.
The IS61LV2568 is available in 36-pin 400-mil SOJ, and 44-pin TSOP (Type II) packages.