SRAM 4Mb 8ns/3.3v 10ns/2.4-3.6v
IS61WV5128BLL-10KLI: SRAM 4Mb 8ns/3.3v 10ns/2.4-3.6v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
| Memory Size : | 4 Mbit | Organization : | 512 Kbit x 8 |
| Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V |
| Supply Voltage - Min : | 2.4 V | Maximum Operating Current : | 45 mA |
| Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
| Mounting Style : | SMD/SMT | Package / Case : | SOIC-36 |
| Packaging : | Tube |
| Technical/Catalog Information | IS61WV5128BLL-10KLI |
| Vendor | ISSI, Integrated Silicon Solution Inc |
| Category | Integrated Circuits (ICs) |
| Memory Type | SRAM - Asynchronous |
| Memory Size | 4M (512K x 8) |
| Speed | 10ns |
| Interface | Parallel |
| Package / Case | 36-SOJ |
| Packaging | Tube |
| Voltage - Supply | 1.65 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 85°C |
| Format - Memory | RAM |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IS61WV5128BLL 10KLI IS61WV5128BLL10KLI IS61WV5128BLL 10KLI ND IS61WV5128BLL10KLI ND IS61WV5128BLL-10KLI |