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IS62C1024L

Features: High-speed access time: 35, 70 ns Low active power: 450 mW (typical) Low standby power: 150 |ìW (typical) CMO standbyOutput Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applicationsFully static operation: no clock or refresh requiredTTL compatible inputs and outputsSi...

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IS62C1024L: Features: High-speed access time: 35, 70 ns Low active power: 450 mW (typical) Low standby power: 150 |ìW (typical) CMO standbyOutput Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in...

IS62C1024L Data Sheet

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Part Number:
IS62C1024L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High-speed access time: 35, 70 ns
Low active power: 450 mW (typical)
Low standby power: 150 |ìW (typical) CMO standby
Output Enable (OE) and two Chip Enable (CE1  and CE2) inputs for ease in applications
Fully static operation: no clock or refresh required
TTL compatible inputs and outputs
Single 5V (±10%) power suppl 


Pinout

Connection Diagram


Specifications

Symbol Symbol Value Unit
VTERM Terminal Voltage with Respect to GND -0.5 to +7.0 V
TSTG Storage Temperature -65 to +150
PT Power Dissipation 1.5 W
IOUT DC Output Current (LOW) 20 mA



Description

The ISSI IS62C1024L is a low power,131,072-word by 8-bit CMOS static RAM. IS62C1024L is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

When CE1 is HIGH or CE2 is LOW (deselected), the IS62C1024L assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.

The IS62C1024L is available in 32-pin plastic SOP and TSOP (type 1) packages.

 


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