IS80C52

V_TERM Terminal Voltage with Respect to GND(2) .........2.0 to +7.0 V
T_BIAS Temperature Under Bias(3) .............................40 to +85 °C
T_STG Storage Temperature .....................................65 to +125 °C
P_T Power Dissipation ...............................................................1.5 W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Minimum DC input voltage is 0.5V. During transitions, inputs may undershoot to 2.0V for periods less than 20 ns. Maximum DC voltage on output pins is Vcc + 0.5V which may overshoot to Vcc + 2.0V for periods less than 20 ns.
3. Operating temperature is for commercial products only defined by this specification.

The ISSI IS80C52 and IS80C32 are high-performance microcontrollers fabricated using high-density CMOS technology. The CMOS IS80C52/32 is functionally compatible with the industry standard 8052/32 microcontrollers.

The IS80C52/32 is designed with 8K x 8 ROM (IS80C52 only); 256 x 8 RAM; 32 programmable I/O lines; a serial I/O port for either multiprocessor communications, I/O expansion or full duplex UART; three 16-bit timer/counters;an eight-source, two-priority-level, nested interrupt structure; and an on-chip oscillator and clock circuit. The IS80C52/32 can be expanded using standard TTL compatible memory.