MFG:FAIRC Package Cooled:TO-263(D2PAK) D/C:09+
MFG: FAIRC
Package Cooled: TO-263(D2PAK)
D/C: 09+
Description: This device employs a new advanced trench MOSFET technology and features low gate charge while maintai...
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain to Source Voltage | 30 | V |
| VGS | Gate to Source Voltage | ±20 | V |
| ID |
Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RJA = 43oC/W) Pulsed |
75 | A |
| 75 | A | ||
| 25 | A | ||
| Figure 4 | |||
| PD | Power dissipation Derate above |
215 1.43 |
W W/ |
| TJ, TSTG | Operating and Storage Temperature | -55 to 175 |
•Fast switching
•rDS(ON) = 0.0026 (Typ), VGS = 10V
•rDS(ON) = 0.004 (Typ), VGS = 4.5V
•Qg (Typ) = 61nC, VGS = 5V
•Qgd (Typ) = 17nC
•CISS (Typ) = 7000pF
ISL9N303AS3ST
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This ISL9N303AS3 employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this ISL9N303AS3 improves the overall efficiency of DC/DC converters and allows operatio...
This ISL9N303AP3 employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this ISL9N303AP3 improves the overall efficiency of DC/DC converters and allows operatio...
This ISL9N302AS3ST employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this ISL9N302AS3ST improves the overall efficiency of DC/DC converters and allows oper...
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