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ITC1100

SpecificationsPower DissipationDevice Dissipation1 @ 25 (Pd) 3400 WThermal Resistance1 (JC) . 08/WVoltage and CurrentCollector-Base Voltage 65VEmitter-Base Voltage 3.5VCollector Current1 80ATemperaturesStorage Temperature-40 to +150Operating Junction Temperature1+200DescriptionThe ITC1100 is a com...

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ITC1100: SpecificationsPower DissipationDevice Dissipation1 @ 25 (Pd) 3400 WThermal Resistance1 (JC) . 08/WVoltage and CurrentCollector-Base Voltage 65VEmitter-Base Voltage 3.5VCollector Current1 80ATemperat...

ITC1100 Data Sheet

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Part Number:
ITC1100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Power Dissipation
Device Dissipation1 @             25 (Pd) 3400 W
Thermal Resistance1 (JC) .                    08/W
Voltage and Current
Collector-Base Voltage                                 65V
Emitter-Base Voltage                                   3.5V
Collector Current1                                        80A
Temperatures
Storage Temperature                    -40 to +150
Operating Junction Temperature1            +200


Description

The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold thin-film metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low thermal resistance package reduces junction temperature which extends the life time of the product.




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