ITR20001/T

Series: -
Sensing Method: Reflective
Current - DC Forward (If): 50mA
Output Type: Phototransistor
Mounting Type: Through Hole
Packaging: Bulk
Sensing Distance: 0.197" (5mm)
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
Manufacturer: Everlight Electronics Co Ltd
Response Time: *
Package / Case: 4-DIP (0.100", 2.54mm)


Features:

`Fast response time
`High analytic
`High sensitivity
`Cut-off visible wavelength _P=940nm
`Pb Free
`This product itself will remain within RoHS compliant version.


Application

·Mouse Copier
·Switch Scanner
·Floppy disk driver
·Non-contact Switching
·For Direct Board


Specifications

Parameter		Symbol	Rating	Unit
Input	Power Dissipation at(or below) 25 Free Air Temperature	Pd	75
	Reverse Voltage	VR	5
	Forward current	IF	50	mA
	Peak Forward Current (*1) Pulse width 100s, Duty cycle=1%	IFP	1	mW
Output	Collector Power Dissipation	PC	75	V
	Collector Current	IC	20	V
	Collector-Emitter Voltage	BVCEO	30	mA
	Emitter-Collector Voltage	BVECO	5	mW
Operating temperature		Topr	-25~+85
Storage temperature		Tstg	-40~+85
Lead Soldering Temperature (*2) (1/16 inch form body for 5 seconds)		Tsol	260

(*1) tw=100 sec. , T=10 msec. (*2) t=5 Sec


Description

The ITR20001/T consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IR only . This is the normal situation. But when an reflecting object close to ITR ,phototransistor receives the reflecting radiation .For additional component information,please refer to IR2424-3C and PT2424-6B.