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Part Number: ITR9809-F

 

 

 

 

Description: The ITR9809-F/T consist of an infrared emitting diode and an NPN silicon phototransistor, encased side...


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ITR9809-F General Description


The ITR9809-F/T consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing .

The phototransistor receives radiation from the IRED only .This is the normal situation. But when an object is in between , phototransistor could not receives the radiation. For additional component information , please refer to IR928-6C-F and PT928-6C-F

ITR9809-F Maximum Ratings

Parameter
Symbol
Ratings
Unit
Input Power Dissipation at(or below) 25 Free
Air Temperature
Pd
75
mW
Reverse Voltage
VR
5
V
Forward Current
IF
50
ma
Peak Forward Current (*1)
Pulse width 100s, Duty cycle=1%
IFP
1
A
Output Collector Power Dissipation
PC
75
mW
Collector Current
IC
20
mA
Collector-Emitter Voltage
BVCEO
30
V
Emitter-Collector Voltage
BVECO
5
V
Operating Temperature
Topr
-25~+85
Storage Temperature
Tstg
-40~+85
Lead Soldering Temperature (*2)
(1/16 inch form body for 5 seconds)
Tsol
260
(*1) tw=100 sec. , T=10 msec. (*2) t=5 Sec

ITR9809-F Features

`Fast response time
`High analytic
`Cut-off visible wavelength p=940nm
`High sensitivity
`Pb free
`This product itself will remain within RoHS compliant version.

ITR9809-F Typical Application

·Mouse Copier
·Switch Scanner
·Floppy disk driver
·Non-contact Switching
·For Direct Board

ITR9809-F datasheet

ITR20002
PDF/DataSheet Download

Find ITR9809-F Suppliers

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ITR9809-F Relative Products

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