ITR9907

OPTO INTERRUPTER

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ITR9907 Picture
SeekIC No. : 004137980 Detail

ITR9907: OPTO INTERRUPTER

floor Price/Ceiling Price

US $ .12~.12 / Piece | Get Latest Price
Part Number:
ITR9907
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • Unit Price
  • $.12
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/5/4

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Product Details

Quick Details

Series: - Manufacturer: Everlight Electronics Co Ltd
Sensing Distance: 0.063" (1.6mm) Sensing Method: Reflective
Maximum Power Dissipation : 700 mW Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA Current - DC Forward (If): 50mA
Output Type: Phototransistor Response Time: 15µs, 15µs
Mounting Type: Through Hole Package / Case: Module, PC Pins, Slot Type    

Description

Series: -
Sensing Method: Reflective
Current - DC Forward (If): 50mA
Output Type: Phototransistor
Mounting Type: Through Hole
Packaging: Bulk
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
Response Time: 15µs, 15µs
Package / Case: Module, PC Pins, Slot Type
Manufacturer: Everlight Electronics Co Ltd
Sensing Distance: 0.063" (1.6mm)


Features:

•Fast response time
•High sensitivity
•Cut-off visible wavelength p=940nm
•Thin
•Small package
•Pb free
•The product itself will remain within RoHS compliant version.



Application

•Camera
•Copier
•Scanner
•Non-contact Switching
•For Direct PC Board



Specifications

Parameter
Symbol
Ratings
Unit
Input Power Dissipation at(or below) 25 Free Air Temperature
Reverse Voltage
Forward Current
Peak Forward Current (*1)
Pulse width 100s, Duty cycle=1%
Pd
VR
IF

IFP
75
5
50

1
mW
V
mA

A
Output Collector Power Dissipation
Collector Current
Collector-Emitter Voltage
Emitter-Collector Voltage
PC
IC
BVCEO
BVECO
75
20
30
5
mW
mA
V
V
Operating Temperature
Topr
-25~+85
Storage Temperature
Tstg
-40~+85
Lead Soldering Temperature (*2)
Tsol
260
(*1) tw=100 sec. , T=10 msec. (*2) t=5 Sec


Description

The ITR9907 consists of an infrared emitting Diode and a silicon phototransistor encased in a black Thermo-plastic housing. The advantage of the device is the small package. Phototransistor receives radiation from the IRED only, and avoids the noise from ambient light




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