MFG:EVER LIGHT Package Cooled:. D/C:07+
MFG: EVER LIGHT
Package Cooled: .
D/C: 07+
Description: The ITR9909 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-...
The ITR9909 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IRED only. This is the normal situation. But when an object is in between, phototransistor could not receives the radiation. For additional component information, please refer to IR1254-R8 and PT1254-6B.
| Parameter | Symbol | Rating | Unit | |
| Input | Power Dissipation | PD | 100 | mW |
| Reverse Voltage | VR | 5 | V | |
| Forward Current | IF | 50 | mA | |
| Peak Forward Current(*1) | IFP | 1 | A | |
| Output | Collect Power Dissipation | Pc | 75 | mW |
| Collect Current | Ic | 20 | mA | |
| Collector-Emitter Voltage | VCE | 30 | V | |
| Emitter-Collector Voltage | VEC |
5 | V | |
| Operating Temperature | Topr | -25~+85 | ||
| Storage Temperature | Tstg | -40~+85 | ||
| Soldering Temperature(*2) | Tsol | 260 | ||
ITR9909
PDF/DataSheet Download
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