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IXBH42N170A

IGBT Transistors BIMOSET 42A 1700V

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SeekIC No. : 00142717 Detail

IXBH42N170A: IGBT Transistors BIMOSET 42A 1700V

IXBH42N170A Data Sheet

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Part Number:
IXBH42N170A
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Collector-Emitter Saturation Voltage : 6 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Package / Case : TO-247-3
Collector- Emitter Voltage VCEO Max : 1700 V
Collector-Emitter Saturation Voltage : 6 V


Features:

· High Blocking Voltage
· JEDEC TO-268 surface and JEDEC TO-247 AD
· Fast switching
· High current handling capability
· MOS Gate turn-on
   - drive simplicity
· Molding epoxies meet UL 94 V-0 flammability classification


Application

· AC motor speed control
· Uninterruptible power supplies (UPS)
· Switched-mode and resonant-mode power supplies
· Substitutes for high voltage MOSFETs


Parameters:

Technical/Catalog InformationIXBH42N170A
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)42A
Vce(on) (Max) @ Vge, Ic6V @ 15V, 21A
Power - Max350W
Mounting TypeThrough Hole
Package / CaseTO-247AD
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXBH42N170A
IXBH42N170A



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